Nitride Semiconductor Technology

Fabrizio Roccaforte is Senior Researcher at Italian National Research Council's (CNR) Institute of Microelectronics and Microsystems (IMM) in Catania, Italy. He received his PhD from University of G?ttingen, Germany in 1999 and worked as Scientific Consultant at STMicroelectronics N.V. in Italy before joining IMM. His research interests are in the field of wide band gap semiconductor materials and materials for power electronics devices. Dr. Roccaforte has authored more than 250 research articles, several review articles, five book chapters, and three patents. Michal Leszczynski is a Professor of Polish Academy of Sciences at the Institute of High Pressure Physics (Unipress), Warsaw, Poland. He received his PhD (1990) and Habilitation (1996) in Physics from Institute of Physics - Polish Academy of Science, Warsaw. He then did postdoctoral research at Institute of Theoretical Physics, Trieste, Italy and at Institute of Advanced Materials, Brindisi, Italy. He has served as Visiting Professor at Center of Atomic Energy, Grenoble, France and as Advisor at Philips Analytical, Netherlands. Prof. Leszczynski is a co-founder and now vice-president (R&D) of TopGaN Lasers, a spinoff of Unipress. His research interests are nitride semiconductors, optoelectronics, crystal growth, crystal defects, and X-ray diffraction. He has authored more than 350 research articles.

Introduction to Gallium Nitride Properties and Applications
GaN-Based Materials: Substrates, Growth Methods and Quantum Well Properties
State of the Art of GaN-Based HEMTs for Mm-Wave Applications
Technologies for Normally-Off GaN HEMTs
Status and Perspectives of Vertical GaN Power Devices
Gallium Nitride Light Emitting Diodes
Nitride-Based Laser Diodes
Blue and Green Vertical-Cavity Surface-Emitting Lasers
Reliability Issues in GaN HEMTs and LEDs
Integration of GaN with 2D Materials for Novel High Frequency Devices