Silicon Devices – Structures and Processing

Kenneth A. Jackson is Professor in the Department of Materials Science and Engineering at the University of Arizona in Tucson, where he has been since 1989. He received his Ph.D. degree from Harvard University in 1956, and was an assistant Professor there until 1962, when he joined AT&T Bell Laboratories. At Bell Labs he was head of Materials Physics Research for many years. His major scientific interests are in the kinetic processes of crystal growth, and his scientific contributions include constitutional supercooling, the surface roughening transition, defect formation in crystals, and studies of alloy crystallization. He pioneered in computer simulation studies of the atomic scale processes during crystal growth. He has served as President for both the American Association for Crystal Growth and the Materials Research Society. He has received awards for his scientific contributions from both the American and the International Crystal Growth societies, and from the Materials Society of AIME, and has written and edited several books. He was elected to the National Academy of Engineering in 2005.

SILICON PROCESSING Single Crystal Silicon Czochralski Silicon Crystal Engineering SILICON DEVICE STRUCTURES Potential-Effect Devices Field-Effect Devices Quantum-Effect Devices Photonic Diodes SILICON DEVICE PROCCESSING Gettering Device Isolation Junction Formation Metallization Cluster Tool Technology