Silicon Devices and Process Integration (eBook)
XXVI, 598 Seiten
Springer US (Verlag)
978-0-387-69010-0 (ISBN)
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author's industrial and academic lecture notes and reflects years of experience in the development of silicon devices.
Features include:
- A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon;
- State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS;
- CMOS-only applications, such as subthreshold current and parasitic latch-up;
- Advanced Enabling processes and process integration.
This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author's industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include:A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon;State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS;CMOS-only applications, such as subthreshold current and parasitic latch-up;Advanced Enabling processes and process integration.This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Preface 5
Contents 7
List of Symbols 12
Silicon Properties 25
1.1 Introduction 25
1.2 Valence-Bond and Two-Carrier Concept 25
1.3 Energy Bands in Silicon 30
1.4 Thermal Equilibrium Statistics 41
1.5 Carrier Transport 52
1.6 Nonequilibrium Conditions 68
1.7 Problems 74
References 76
Junctions and Contacts 78
2.1 Introduction 78
2.2 PN Junction 78
2.3 Contacts 134
2.4 Problems 152
References 154
The Bipolar Transistor 157
3.1 Introduction 157
3.2 Transistor Action, a Qualitative Description 158
3.3 Planar Transistor, Low-Level Injection 165
3.4 High-Level Injection Effects 194
3.5 Frequency Response of Current Gain 197
3.6 The Transistor as a Switch 204
3.7 Silicon-Germanium Transistor 210
3.8 Problems 226
References 229
The MOS Structure 235
4.1 Introduction 235
4.2 Physics of an Ideal MOS Structure 236
4.3 Calculation of Capacitance 250
4.4 Measurement of MOS Capacitance 261
4.5 Non-Uniform Impurity Profile 263
4.6 Non-Ideal MOS Structure 266
4.7 Characterization and Parameter Extraction 275
4.8 Carrier Transport Through the Dielectric 286
4.9 Problems 290
References 292
Insulated-Gate Field-Effect Transistor 295
5.1 Introduction 295
5.2 Qualitative Description of MOSFET Operation 295
5.3 Gate-Controlled PN Junction, or Gated Diode 299
5.4 MOSFET Characteristics 308
5.5 Mobility Enhancement 352
5.6 Ultrathin Oxide and High-K Dielectrics 362
5.7 Gate Stack 367
5.8 Three-Dimensional Structures, FinFETS 374
5.9 Problems 375
References 378
Analog Devices and Passive Components 391
6.1 Introduction 391
6.2 Analog Devices 392
6.3 Matching 431
6.4 Noise 444
6.5 Problems 451
References 452
Enabling Processes and Integration 460
7.1 Introduction 460
7.2 A Conventional CMOS Logic Process Flow 460
7.3 A BiCMOS Process Flow 467
7.4 Advanced Enabling Processes 472
7.5 Advanced Interconnects 510
7.6 Problems 522
References 524
Applications 544
8.1 Introduction 544
8.2 Logic Units 544
8.3 Memories 558
8.4 Problems 588
References 588
Appendix A: Universal Physical Constants 596
Appendix B: International System of Units, SI 597
Appendix C: The Greek Alphabet 598
Appendix D: Properties of Silicon and Germanium ( 300 K, Intrinsic Semiconductor Unless Otherwise Stated) 599
Appendix E: Conversion Factors 601
Index 602
| Erscheint lt. Verlag | 9.1.2009 |
|---|---|
| Zusatzinfo | XXVI, 598 p. |
| Verlagsort | New York |
| Sprache | englisch |
| Themenwelt | Technik ► Elektrotechnik / Energietechnik |
| Technik ► Maschinenbau | |
| Schlagworte | bipolar junction transistor • bipolar power transistor • CMOS • Development • Electrical Engineering • field-effect transistor • Heterojunction Bipolar Transistor • Interconnect • junction field-effect transistor • Manufacturing • Material • Materials Science • Semic |
| ISBN-10 | 0-387-69010-7 / 0387690107 |
| ISBN-13 | 978-0-387-69010-0 / 9780387690100 |
| Haben Sie eine Frage zum Produkt? |
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