Silicon Carbide - Materials, Processing and Devices: Volume 640

The proceedings of the November 2000 symposium presents recent research on silicon carbide (SiC) for electronic device applications. The 78 papers deal with bulk growth, epitaxy, interfaces, materials, characterization, implantation and radiation damage, and metallization. Some of the topics are HTCVD growth of semi-insulating 4H-SiC crystals with